Power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 108 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific and medical applications
  • FM transmitter applications

Downloads

Datasheet
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF178P

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 128 MHz
PL(1dB) nominal output power at 1 dB gain compression 1200 W
Test signal: Pulsed RF
Gp power gain VDS = 50 V; PL = 1200 W 27 28.5 31 dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1200 W -16 -12 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1200 W 71 75 %
PL output power 1200 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF178P SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF178P,112
(9340 656 54112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF178P BLF178P,112 BLF178P Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF178P 9340 656 54112 BLF178P,112 RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design BLF178P (Data sheet) Design support 2012-02-24